The static power variation, SNM, RNM, and WNM for a nanoscale FinFET-based SRAM cell with regard to driver, load, and breadth of access are analyzed in this work. Semiconductor devices may now be greatly reduced to the nanoscale thanks to FinFET technology. This is due to the fact that the improved control of the FinFET device structure produces a much lower leakage current, which results in a relatively high Ion/ Ioff ratio.