This study investigates the RF performance of surrounding gate (SRG) MOSFETs using a simulation exercise. It has also been carefully examined how non-ideality in the fabrication process leads to a nonsymmetrical gate structure. A 2D device simulator is used to investigate important RF figures of merit, such as the maximum operating frequency (fMAX) and the unity-gain cut-off frequency (fT). There have also been reports on the trends in the fluctuation of numerous design parameters, such as radius, oxide thickness, gate length, and doping, as they downscale.