An Inductor Less Low Power Low Noise Amplifier for Wireless Applications

Authors

  • P. Ramakrishna
  • B. Akhil
  • B. Srikanth
  • S. Pothalaiah

Abstract

Low Noise Amplifiers has been used in various applications of cellular telephones, GPS receivers, wireless LANs (Wi-Fi), and satellite communications. LNA represents a basic building block of modern communication systems, it constitutes a part of RF Front-end module and a key block in a receiver section. In practical systems, such as cellular phones, the received signal is very low and must be amplified before demodulation. However, amplifier add noise to the signal they boost and when amplifying a very low-level signal, The amplifier noise may swamp the signal itself. To reduce the noise from signal and to get the amplified signal, LNA is the best solution. LNA should meet simultaneously several specifications such as maximum gain with minimum noise figure. These Low Noise Amplifiers may have inductor embedded which would cause large requirement of silicon area. The proposed inductor less LNA, implemented in a 45 nm GPDK CMOS technology, is based on a common-gate configuration imbedded with a common-source stage to boost the overall transconductance of the circuit. This Inductor less Low Noise Amplifiers needs to have effective Noise figure and linearity to have adjustable gain. As today electronic devices have huge demand in working with low power, so to achieve this feature a variable body biasing technique is applied to the Inductor less Low Noise Amplifier. The VBB technique used a DC bias at body terminal to control the threshold voltage efficiently. This inductor less LNA consume power of 1mW, the gain of the LNA is 21dB and its noise figure is 9dB.

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Published

2023-03-12